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SPICE MODEL: DMMT5551 Lead-free Green DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (DMMT5401) Ideal for Low Power Amplification and Switching Intrinsically Matched NPN Pair (Note 1) 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) Lead Free/RoHS Compliant (Note 4) "Green" Device (Note 5 and 6) H K M A SOT-26 BC Dim A B C D F H J K L M Min 0.35 1.50 2.70 2.90 1.00 0.35 0.10 0 Max 0.50 1.70 3.00 3.10 1.30 0.55 0.20 8 Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 Mechanical Data * * * * * * * * * J Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound, Note 7. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Marking (See Page 2): K4R & K4T Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) C1 B1 E1 E2 D F L 0.013 0.10 C2 C1 E1 C2 All Dimensions in mm B2 B1 E2 B2 DMMT5551 (K4R Marking Code) DMMT5551S (K4T Marking Code) Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG Value 180 160 6.0 200 300 417 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector Current - Continuous (Note 2) Power Dissipation (Note 2, 3) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage and Temperature Range Notes: 1. Built with adjacent die from a single wafer. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Maximum combined dissipation. 4. No purposefully added lead. 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.. 6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30436 Rev. 7 - 2 1 of 4 www.diodes.com DMMT5551/DMMT5551S (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 7) DC Current Gain (Note 8) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 80 80 30 50 100 Max 50 50 250 0.15 0.20 1.0 Unit V V V nA A nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200A, RS = 1.0k, f = 1.0kHz hFE VCE(SAT) VBE(SAT) V V Cobo hFE fT NF 6.0 250 300 8.0 pF MHz dB Ordering Information Device DMMT5551-7-F (Note 6 & 9) Packaging SOT-26 SOT-26 Shipping 3000/Tape & Reel 3000/Tape & Reel DMMT5551S-7-F Notes: 6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 7. Short duration pulse test used to minimize self-heating effect. 8. The DC Current Gain, hFE, (matched at IC = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. 9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information E1 E2 C2 C1 E1 C2 K4R C1 B1 K4R = DMMT5551 Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September B1 K4T E2 K4T = DMMT5551S Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September YM B2 B2 Date Code Key Year Code 2003 Q 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Code Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 YM Aug 8 Sep 9 Oct O Nov N Dec D DS30436 Rev. 7 - 2 2 of 4 www.diodes.com DMMT5551/DMMT5551S 400 Note 2 350 0.15 0.14 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current TA = -50C TA = 25C TA = 150C IC = 10 IB PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1.0 1000 VCE = 5V TA = 150C hFE, DC CURRENT GAIN VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA = 150C TA = 25C TA = -50C 100 TA = 25C TA = -50C 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current 100 DS30436 Rev. 7 - 2 3 of 4 www.diodes.com DMMT5551/DMMT5551S IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30436 Rev. 7 - 2 4 of 4 www.diodes.com DMMT5551/DMMT5551S |
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